Synthesis and Characterization of TiN Thin Films by DC Reactive Magnetron Sputtering

نویسندگان

چکیده

In this work, the titanium nitride (TiN) thin films were prepared on Si-wafers by using DC reactive magnetron sputtering from a pure target. The influence of N2 flow rates, in range 1.0-4.0 sccm, as-deposited TiN film’s structure was characterized several techniques. (i) crystal structures studied GI-XRD. (ii) thicknesses, microstructures, and surface morphologies analyzed FE-SEM. (iii) elemental composition measured EDS. (iv) hardness nano-indentation. (v) color identified UV-VIS spectrophotometer. results showed that polycrystalline B1-NaCl structure. lattice constants ranging 4.211-4.239 Å. nano size 17.8-24.6 nm. thickness decreases 1254 nm to 790 with following rates. concentration Ti N depended cross-sectional analysis had compact-columnar increased 4 19 GPa increasing close 24K gold CIE L*a*b* system obtained deposition optimal

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ژورنال

عنوان ژورنال: Suan Sunandha Rajabhat University Journal of Science and Technology

سال: 2023

ISSN: ['2351-0889']

DOI: https://doi.org/10.53848/ssstj.v10i2.353